Diodes and Transistors

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If you wish to reduce the current flowing in a field effect transistor, you could:

decrease the reverse bias voltage

increase the reverse bias voltage

increase the forward bias gain

increase the forward bias voltage

None

For a certain 12 V zener diode, a 10 mA change in zener current produces a 0.1 V change in zener voltage. The zener impedance for this current ranges is

1 Ω

0.1 Ω

10 Ω

100 Ω

None

For operation as an amplifier, the base of a npn transistor must be

negative with respect to the emitter

0 V

positive with respect to the collector

positive with respect to the emitter

None

The positive lead of an ohmmeter is connected to the anode of a diode and the negative lead is connected to the cathode. The diode is

open

faulty

reverse-biased

Forward-biased

None

A silicon diode is in series with 1.0 kΩ resistor and a 5 V battery. If the anode is connected to the positive battery terminal, the cathode voltage with respect to the negative battery terminal is

5.7 V

0.7 V

4.3 V

0.3 V

None

Pinch-off voltage VP for an FET is the drain voltage at which

drain current becomes zero

avalanche break down takes place

all free charges get removed from the channel

significant drain current starts flowing

None

In order for a diode to conduct, it must be:

close coupled

enhanced

forward-biased

reverse-biased

None

A transistor in common emitter mode has

a medium input resistance and high output resistance

a very low input resistance and a low output resistance

a high input resistance and low output resistance

a high input resistance and a high output resistance

None

When a 60 Hz sinusoidal voltage is applied to the input of a full-wave rectifier, the output frequency is

120 Hz

30 Hz

60 Hz

75 Hz

None

Which two elements in a field effect transistor exhibit fairly similar characteristics?

Source and base

Source and gate

Source and drain

Gate and drain

None

The approximate voltage across the forward-biased base emitter junction of a silicon BJT is

0.4 V

0.7 V

0 V

0.3 V

None

A transistor can be destroyed in a circuit by:

saturation

excessive light

excessive heat

cut-off

None

When the peak output voltage is 100 V, the PIV for each diode in a center-tapped full-wave rectifier is (neglecting the diode drop)

50 V

141 V

200 V

100 V

None

The total secondary voltage in a center-tapped full-wave rectifier is 125 rms. Neglecting the diode drop, the rms output voltage is

125 V

62.5 V

100 V

117 Hz

None

JFET is a

Current controlled device with high input resistance

Voltage Controlled Voltage Source (VCVS)

Voltage controlled device with high input resistance

Current Controlled Current Source (CCCS

None

Voltage regulation is the principal application of the:

junction diode

light-emitting diode

vacuum diode

Zener diode

None

A 60 V peak full-wave rectified voltage is applied to a capacitor-input filter. If f = 120 Hz. RL = 10 k Ω and C = 10 μF, the ripple voltage is

2.88 V

0.6 V

5.0 V

6 mV

None

Compared to bipolar transistors, field effect transistors are NOT normally characterized by:

low power consumption

a reverse-biased PN junction

low input impedance

high input impedance

None

Bipolar transistors usually have:

1 lead

3 leads

4 leads

2 leads

None

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